Influence of annealing in N2 on the properties of In2O3:Sn thin films prepared by direct current magnetron sputtering

Materials Science and Engineering: B

Volumn 138, Issue 2, 2007, Pages 166-171

  Lin, Limei ^a   Lai, Fachun ^a   Qu, Yan ^a   Gai, Rongquan ^a   Huang, Zhigao ^a  

^a FUJIAN NORMAL UNIVERSITY   (China)

Author keywords

Electrical properties; Indium tin oxide; Optical properties; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; MAGNETRON SPUTTERING; MORPHOLOGY; QUARTZ; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

FOROUHI-BLOOMER MODELS; INDIUM TIN OXIDE; OPTICAL SIMULATION; SPECTROPHOTOMETER;

THIN FILMS;

EID: 33847330750     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.01.021     Document Type: Article

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