Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 190-193

  Tsukihara, M ^a   Sumiyoshi, K ^a   Okimoto, T ^a   Kataoka, K ^a   Kawamichi, S ^a   Nishino, K ^a   Naoi, Y ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

A1. Dislocation reduction; A3. MOCVD; B1. AlGaN

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

ALGAN; DISLOCATION REDUCTION; MTIL TECHNIQUE; ULTRA-VIOLET LIGHT EMITTING DIODE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33847262914     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.011     Document Type: Article

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