340-350 nm GaN-free UV-LEDs

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 106-109

  Nishida, T ^a   Ban, T ^b   Kobayashi, N ^a,c  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NEL Technosupport   (Japan)

^c UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FLUORESCENCE; GLARE; LIGHT ABSORPTION; LIGHT EMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; ULTRAVIOLET DEVICES;

ALUMINUM GALLIUM NITRIDE; EXTERNAL QUANTUM EFFICIENCY; INJECTION CURRENT; LIGHT EXTRACTION;

LIGHT EMITTING DIODES;

EID: 0346885869     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303411     Document Type: Article

References (7)

1. T. Nishida and N. Kobayashi, ICNS3, Montpellier (France) 1999 (We-06)
2. T. Nishida and N. Kobayashi, phys. stat. sol. (a) 176, 45 (1999).
3. T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 79, 711 (2001).
4. T. Nishida, T. Ban, and N. Kobayashi, Appl. Phys. Lett. 82, 1 (2003).
5. T. Shibata, Y. Kida, T. Nagai, S. Sumiya, M. Tanaka, O. Oda, H. Miyake, and H. Hiramatsu, MRS Fall Meeting, (Boston, USA, 2001) (19-3).
6. T. Nishida, T. Ban, and N. Kobayashi, SSDM2002, (Nagoya, Japan, 2002) (G-8-5)
7. T. Nishida, T. Ban, and N. Kobayashi, Jpn. J. Appl. Phys. 42, 2273 (2003).