Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots

Optics Express

Volumn 15, Issue 4, 2007, Pages 1898-1906

  Chan, C H ^a   Huang, Y S ^b   Wang, J S ^c   Tiong, K K ^d  

^a ST JOHN'S UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTRON TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

CARRIER SCATTERING; SURFACE PHOTOVOLTAGE (SPY) SPECTRA; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33847168238     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.001898     Document Type: Article

References (29)

1. D. Pan, E. Towe, and S. Kennerly, "Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors," Appl. Phys. Lett. 73, 1937-1939 (1998).
2. S. -W. Lee, K. Hirakawa, and Y. Shimada, "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures," Appl. Phys. Lett. 75, 1428-1430 (1999).
3. D. G. Deppe, D. L. Huffaker, S. Csufak, Z. Zou, G. Park, and O. B. Shchekin, "Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers," IEEE J. Quantum Electron. 35, 1238-1246 (1999).
4. D. Loss and D. P. DiVincenzo, "Quantum computation with quantum dots," Phys. Rev. A 57, 120-126 (1998).
5. W. Sheng and J. -P. Leburton, "Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots," Appl. Phys. Lett. 78, 1258-1260 (2001).
6. G. T. Liu, A. Stinz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. T. Malloy, and L. F. Lester, "The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures," IEEE J. Quantum Electron. 36, 1272-1279 (2000).
7. G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., "Vertically aligned and electronically coupled growth induced InAs islands in GaAs," Phys. Rev. Lett. 76, 952-955 (1996).
8. J. S. Wang, R. S. Hsiao, J. F. Chen, C. S. Yang, G. Lin, C. Y. Liang, C. M. Lai, H. Y. Liu, T. W. Chi, and J. Y. Chi, "Engineering laser gain spectrum using electronic vertically coupled InAs/GaAs quantum dots," IEEE Photonics Technol. Lett. 17, 1590-1592 (2005).
9. M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaǐtsev, N. Yu. Gordeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsl'nikov, and Zh. I. Alferov, "Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix," Semiconductors 31, 571-574 (1997).
10. J. -Y. Marzin, J. -M. Gerard, A. Izraël, D. Barrier, and G. Bastard, "Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs," Phys. Rev. Lett. 73, 716-719 (1994).
11. M. Grundmann, J. Christen, N. N. Ledenstov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, "Ultranarrow luminescence lines from single quantum dots," Phys. Rev. Lett. 74, 4043-4046 (1995).
12. D. Bimberg, M. Grundmann, and N. N. Ledenstov, Quantum Dot Heterostructures (John Wiley & Sons, Chichester, 1999).
13. D. Leonard, S. Fared, K. Pond, Y. H. Zhang, J. L. Merz, and P. M. Petroff, "Structural and optical properties of self-assembled InGaAs quantum dots," J. Vac. Sci. Technol. B 12, 2516-2520 (1994).
14. K. H. Schmidt, G. Mederiros-Ribeiro, M. Oestreich, P. M. Petroff, and G. H. Döhler, "Carrier relaxation and electronic structure in InAs self-assembled quantum dots," Phys. Rev. B 54, 11346-11353 (1996).
15. A. M. Adawi, E. A.Zibik, L. R. Wilson, A. Lemaître, J. W. Cockburn, M. S. Skolnick, M. Hopkinson, and G. Hill, "Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots," Appl. Phys. Lett. 83, 602-604 (2003).
16. L. Kronik and Y. Shapira, "Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering," Surf. Interface Anal. 31, 954-965 (2001).
17. C. H. Chan, H. S. Chen, C. W. Kao, H. P. Hsu, Y. S. Huang, and J. S. Wang, "Investigation of multilayer electronic vertically coupled InAs/GaAs quantum dot structures using surface photovoltage spectroscopy," Appl. Phys. Lett. 89, 22114-22116 (2006).
18. C. H. Chan, H. S. Chen, C. W. Kao, H. P. Hsu, Y. S. Huang, and J. S. Wang, "Surface photovoltage spectroscopy and photoluminescence study of vertically coupled self-assembled InAs/GaAs quantum dot structures," J. Appl. Phys. 100, 64301-64306 (2006).
19. B. Q. Sun, Z. D. Liu, D. S. Jiang, J. Q. Wu, Z. Y. Xu, Y. Q. Wang, J. N. Wang, and W. K. Ge, "Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots," Appl. Phys. Lett. 73, 2657-2659 (1998).
20. V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul'nikov, N. Yu. Gordeev, S. V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, and U. Gösele, "Low-threshold injection lasers based on vertically coupled quantum dots," J. Crystal Growth 175/176, 689-695 (1997).
21. M. O. Lipinski, H. Schuler, O. G. Schuler, O. G. Schmidt, and K. Eberl, "Strain-induced material intermixing of InAs quantum dots in GaAs," Appl. Phys. Lett. 77, 1789-1791 (2000).
22. J. Toušková, E. Samochin, J. Toušek, J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, and T. Šimeček, "Photovoltage spectroscopy of InAs/GaAs quantum dot structures," J. Appl. Phys. 91, 10103-10106 (2002).
23. J. S. Wang, S. H. Yu, Y. R. Lin, H. H. Lin, C. S. Yang, T. T. Chen, Y. F. Chen, G. W. Shu, J. L. Shen, R. S. Hsiao, J. F. Chen, and J. Y. Chi, "Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures," Nanotechnology 18, 15401-15405 (2007).
24. H. Heidemeyer, S. Kiravittaya, C. Müller, N. Y. Jin-Phillipp, and O. G. Schmidt, "Closely stacked InAs/GaAs quantum dots grown at low growth rate," Appl. Phys. Lett. 80, 1544-1546 (2002).
25. J. R. Downes, D. A. Faux, and E. P. O'Reilly, "A simple method for calculating strain distributions in quantum dot structures," J. Appl. Phys. 81, 6700-6702 (1997).
26. W. Sheng and J. -P. Leburton, "Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots," Phys. Rev. Lett. 88, 167401-167404 (2002).
27. y quantum well structures," Phys. Rev. B 66, 205324-205331 (2002).
28. 0.40As/GaAs self-assembled quantum dots," Phys. Rev. B 65, 41308-41311 (2002).
29. B. L. Anderson and R. L. Anderson, Fundamentals of Semiconductor Devices (McGraw-Hill, New York, 2005).