Investigation of multilayer electronic vertically coupled InAs/GaAs quantum dot structures using surface photovoltage spectroscopy

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Chan, C H ^a   Chen, H S ^b   Kao, C W ^b   Hsu, H P ^b   Huang, Y S ^b   Wang, J S ^c  

^a ST JOHN'S UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; LIGHT ABSORPTION; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; WETTING;

ROOM-TEMPERATURE SURFACE PHOTOVOLTAGE SPECTROSCOPY; SPACER LAYER (SL) THICKNESSES; WETTING LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746059009     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2221402     Document Type: Article

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