Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures

Nanotechnology

Volumn 18, Issue 1, 2007, Pages

  Wang, J S ^a   Yu, S H ^a   Lin, Y R ^b   Lin, H H ^b   Yang, C S ^c   Chen, T T ^b   Chen, Y F ^b   Shu, G W ^a   Shen, J L ^a   Hsiao, R S ^c   Chen, J F ^c   Chi, J Y ^d  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MULTILAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

BLUE SHIFTS; GROWTH RATES; STRUCTURAL COUPLINGS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846796286     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/1/015401     Document Type: Article

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