Spectroscopic evaluation of the structural and compositional properties of GaNxAs1-x superlattices grown by molecular beam epitaxy

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4430-4434

  Barker, S J ^a   Williams, R S ^a   Mulcahy, C P A ^b   Steer, M J ^c   Hopkinson, M ^c   Ashwin, M J ^a   Newman, R C ^a   Stavrinou, P N ^a   Parry, G ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b BRUNEL UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Dilute nitrides; GaNAs; Local vibrational mode; SIMS

Indexed keywords

MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION;

LOCAL VIBRATIONAL MODE (LVM); MULTIPLE QUANTUM WELL (MQW); PHOTOLUMINESCENCE (PL) SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY (SIMS);

SUPERLATTICES;

EID: 33847117331     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.117     Document Type: Article

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