Quantitative spectroscopy of substitutional nitrogen in GaAs1-xNx epitaxial layers by local vibrational mode absorption

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 303-306

  Alt, Hans Christian ^a   Gomeniuk, Yuri ^a   Ebbinghaus, Gerhard ^b   Ramakrishnan, Arun ^b   Riechert, Henning ^b  

^a MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CALIBRATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR VIBRATIONS; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

QUANTITATIVE SPECTROSCOPY; SUBSTITUTIONAL NITROGEN; VIBRATIONAL MODE ABSORPTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037397545     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/319     Document Type: Article

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