-
1
-
-
4043167872
-
Three-dimensional simulation of vertical-cavity surface-emitting semiconductor lasers
-
Chapter 5, edited by Li and K. Iga, Springer, Berlin
-
M. Osiński and W. Nakwaski, "Three-dimensional simulation of vertical-cavity surface-emitting semiconductor lasers", in Vertical-Cavity Surface-Emitting Laser Diodes, Chapter 5, pp. 135-192, edited by Li and K. Iga, Springer, Berlin, 2003.
-
(2003)
Vertical-cavity Surface-emitting Laser Diodes
, pp. 135-192
-
-
Osiński, M.1
Nakwaski, W.2
-
2
-
-
0030241736
-
Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector
-
K. Streubel, S. Rapp, J. Andre, and J. Wallin, "Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector", IEEE Photon. Techn. Lett. 8, 1121-1123 (1996).
-
(1996)
IEEE Photon. Techn. Lett.
, vol.8
, pp. 1121-1123
-
-
Streubel, K.1
Rapp, S.2
Andre, J.3
Wallin, J.4
-
3
-
-
0031258024
-
Temperature sensitivity of 1.54 pm vertical-cavity lasers with an InP-based Bragg reflector
-
S. Rapp, J. Piprek, K. Streubel, J. Andre, and J. Wallin, "Temperature sensitivity of 1.54 pm vertical-cavity lasers with an InP-based Bragg reflector", IEEE J. Quantum Electron. 33, 1839-1845 (1997).
-
(1997)
IEEE J. Quantum Electron.
, vol.33
, pp. 1839-1845
-
-
Rapp, S.1
Piprek, J.2
Streubel, K.3
Andre, J.4
Wallin, J.5
-
5
-
-
0000434667
-
Simulation and analysis of 1550 nm double-fused vertical-cavity lasers
-
J. Piprek, D.I. Babić, and J.E. Bowers, "Simulation and analysis of 1550 nm double-fused vertical-cavity lasers", J. Appl. Phys. 81, 3382-3390 (1997).
-
(1997)
J. Appl. Phys.
, vol.81
, pp. 3382-3390
-
-
Piprek, J.1
Babić, D.I.2
Bowers, J.E.3
-
6
-
-
0032182131
-
0 of 132 K at room temperature
-
0 of 132 K at room temperature", Electron. Lett. 34, 1947-1949 (1998).
-
(1998)
Electron. Lett.
, vol.34
, pp. 1947-1949
-
-
Black, K.A.1
Abraham, P.2
Margalit, N.M.3
Hegblom, E.R.4
Chiu, Y.-J.5
Piprek, J.6
Bowers, J.E.7
Hu, E.L.8
-
7
-
-
0035971861
-
Waferbonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105°C
-
A. Karim, P. Abraham, D. Lofgreen, Y.-J. Chiu, J. Piprek, and J.E. Bowers, "Waferbonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105°C", Appl. Phys. Lett. 78, 2632-2633 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2632-2633
-
-
Karim, A.1
Abraham, P.2
Lofgreen, D.3
Chiu, Y.-J.4
Piprek, J.5
Bowers, J.E.6
-
8
-
-
0030212654
-
1.55-0μm vertical-cavity surface-emitting lasers with wafer-fused GaInAsP/InP-GaAs/AIAs DBRs
-
Y. Ohiso, H. Okamoto, Y. Itoh, K. Tateno, T. Tadokoro, H. Takenouchi, and T. Kurokawa, "1.55-0μm vertical-cavity surface-emitting lasers with wafer-fused GaInAsP/InP-GaAs/AIAs DBRs", Electron. Lett. 32, 1483-1484 (1996).
-
(1996)
Electron. Lett.
, vol.32
, pp. 1483-1484
-
-
Ohiso, Y.1
Okamoto, H.2
Itoh, Y.3
Tateno, K.4
Tadokoro, T.5
Takenouchi, H.6
Kurokawa, T.7
-
9
-
-
0032186783
-
Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP - GaAs/AlAs DBR's by wafer fusion
-
Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP - GaAs/AlAs DBR's by wafer fusion", IEEE J. Quantum Electron. 34, 1904-1913 (1998).
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, pp. 1904-1913
-
-
Ohiso, Y.1
Amano, C.2
Itoh, Y.3
Takenouchi, H.4
Kurokawa, T.5
-
10
-
-
0032484873
-
GaAlAs/GaAs metamorphic Bragg mirror for long-wavelength VCSEL's
-
L. Goldstein, C. Fortin, C. Starck, A. Plais, J. Jacquet, J. Boucart, A. Rocher and C. Poussou, "GaAlAs/GaAs metamorphic Bragg mirror for long-wavelength VCSEL's", Electron. Lett. 34, 268-270 (1998).
-
(1998)
Electron. Lett.
, vol.34
, pp. 268-270
-
-
Goldstein, L.1
Fortin, C.2
Starck, C.3
Plais, A.4
Jacquet, J.5
Boucart, J.6
Rocher, A.7
Poussou, C.8
-
11
-
-
84876632965
-
...while global optical-fibre market flatlines
-
J. McEntee, "...while global optical-fibre market flatlines", Fibre Systems 1, 7 (2004).
-
(2004)
Fibre Systems
, vol.1
, pp. 7
-
-
McEntee, J.1
-
12
-
-
0036575871
-
Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm
-
W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim, and J.S. Harris Jr., "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm", IEEE Photonics Technology Letters 14, 591-593 (2002).
-
(2002)
IEEE Photonics Technology Letters
, vol.14
, pp. 591-593
-
-
Ha, W.1
Gambin, V.2
Wistey, M.3
Bank, S.4
Kim, S.5
Harris Jr., J.S.6
-
13
-
-
0037380529
-
1.5-μm GaInNAs(Sb) lasers grown on GaAs by MBE
-
S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim, and J.S. Harris Jr., "1.5-μm GaInNAs(Sb) lasers grown on GaAs by MBE", J. Cryst. Growth 251, 367-371 (2003).
-
(2003)
J. Cryst. Growth
, vol.251
, pp. 367-371
-
-
Bank, S.1
Ha, W.2
Gambin, V.3
Wistey, M.4
Yuen, H.5
Goddard, L.6
Kim, S.7
Harris Jr., J.S.8
-
14
-
-
0028516625
-
Importance of metalorganic vapour phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers
-
K. Streubel, J. Wallin, G. Landgren, U. Ohlander, S.Lourdudoss, and K. Kjebon, "Importance of metalorganic vapour phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers", J. Cryst. Growth 143, 7-14 (1994).
-
(1994)
J. Cryst. Growth
, vol.143
, pp. 7-14
-
-
Streubel, K.1
Wallin, J.2
Landgren, G.3
Ohlander, U.4
Lourdudoss, S.5
Kjebon, K.6
-
15
-
-
0031191952
-
The effective frequency method in the analysis of vertical-cavity surface-emitting lasers
-
H. Wenzel and H.-J. Wünsche, "The effective frequency method in the analysis of vertical-cavity surface-emitting lasers", IEEE J. Quantum Electron. 33, 1156-1162 (1997).
-
(1997)
IEEE J. Quantum Electron.
, vol.33
, pp. 1156-1162
-
-
Wenzel, H.1
Wünsche, H.-J.2
-
16
-
-
0042430793
-
Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers
-
P. Maćkowiak and W. Nakwaski, "Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers", J. Phys. D: Appl. Phys. 33, 642-653 (2000).
-
(2000)
J. Phys. D: Appl. Phys.
, vol.33
, pp. 642-653
-
-
Maćkowiak, P.1
Nakwaski, W.2
-
17
-
-
0345807640
-
Simulation of optical phenomena in vertical-cavity surface-emitting lasers: I. Fundamental principles
-
W. Nakwaski, "Simulation of optical phenomena in vertical-cavity surface-emitting lasers: I. Fundamental principles", Opto-Electron. Rev. 8, 83-90 (2000).
-
(2000)
Opto-electron. Rev.
, vol.8
, pp. 83-90
-
-
Nakwaski, W.1
-
18
-
-
11144354341
-
Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers
-
in print
-
R.P. Sarzala, P. Mendia, M. Wasiak, P. Mackowiak, M. Bugajski, and W. Nakwaski, "Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers", Opt. Quantum Electron. 37, (2004). (in print)
-
(2004)
Opt. Quantum Electron.
, vol.37
-
-
Sarzala, R.P.1
Mendia, P.2
Wasiak, M.3
Mackowiak, P.4
Bugajski, M.5
Nakwaski, W.6
-
20
-
-
84876636276
-
-
http://www.ioffe.rssi.ru/SVA/NSM/Semicond
-
-
-
-
21
-
-
11844258155
-
Electro-thermal analysis of oxide-confined vertical-cavity lasers
-
J. Piprek, "Electro-thermal analysis of oxide-confined vertical-cavity lasers", Phys. Stat. Sol. (a) 188, 905-912 (2001).
-
(2001)
Phys. Stat. Sol. (A)
, vol.188
, pp. 905-912
-
-
Piprek, J.1
-
22
-
-
0032653192
-
Theory and experiment of InGaAsP and InGaAIAs long wavelength strained quantum-well lasers
-
J. Minch, S.H. Park, T. Keating, and S.L. Chuang, "Theory and experiment of InGaAsP and InGaAIAs long wavelength strained quantum-well lasers", IEEE J. Quantum Electron. 35, 771-782 (1999).
-
(1999)
IEEE J. Quantum Electron.
, vol.35
, pp. 771-782
-
-
Minch, J.1
Park, S.H.2
Keating, T.3
Chuang, S.L.4
-
23
-
-
0021437102
-
Quantitative evaluation of gain and losses in quaternary lasers
-
A.P. Mozer, S. Hausser, and M.H. Pilkuhn, "Quantitative evaluation of gain and losses in quaternary lasers", IEEE J. Quantum Electron. QE-21, 719-725 (1985).
-
(1985)
IEEE J. Quantum Electron.
, vol.QE-21
, pp. 719-725
-
-
Mozer, A.P.1
Hausser, S.2
Pilkuhn, M.H.3
-
25
-
-
0037442434
-
Theoretical study of radiation effects on GaAs/AlGaAs and InGaAsP/InP quantum-well lasers
-
O. Guard, "Theoretical study of radiation effects on GaAs/AlGaAs and InGaAsP/InP quantum-well lasers", J. Appl. Phys. 93, 1772-1780 (2003).
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 1772-1780
-
-
Guard, O.1
-
26
-
-
0033124043
-
Carrier lifetime and recombination in long-wavelength quantum-well lasers
-
J.M. Pikal, C.S. Menoni, and H. Temkin, "Carrier lifetime and recombination in long-wavelength quantum-well lasers", IEEE J. Select. Topics Quantum Electron. 5, 613-619 (1999).
-
(1999)
IEEE J. Select. Topics Quantum Electron
, vol.5
, pp. 613-619
-
-
Pikal, J.M.1
Menoni, C.S.2
Temkin, H.3
-
27
-
-
0000630140
-
Thermal conductivity of binary, ternary, and quaternary III-V compounds
-
W. Nakwaski, "Thermal conductivity of binary, ternary, and quaternary III-V compounds", J. Appl. Phys. 64, 159-166 (1988).
-
(1988)
J. Appl. Phys.
, vol.64
, pp. 159-166
-
-
Nakwaski, W.1
-
28
-
-
0034313209
-
Long-wavelength vertical-cavity lasers and amplifiers
-
A. Karim, S. Bjorlin, J. Piprek, and J. Bowers, "Long-wavelength vertical-cavity lasers and amplifiers", IEEE J. Select. Topics Quantum Electron. 6, 1244-1253 (2000).
-
(2000)
IEEE J. Select. Topics Quantum Electron
, vol.6
, pp. 1244-1253
-
-
Karim, A.1
Bjorlin, S.2
Piprek, J.3
Bowers, J.4
-
29
-
-
84876611270
-
-
PhD Thesis Dissertation, Institute of Physics, Technical University of Łódź, (in Polish)
-
P. Maćkowiak, "Development of a structure of nitride vertical-cavity surface-emitting laser, its optimisation using self-consistent three-dimensional model of operation", PhD Thesis Dissertation, Institute of Physics, Technical University of Łódź, 2002. (in Polish)
-
(2002)
Development of a Structure of Nitride Vertical-cavity Surface-emitting Laser, Its Optimisation Using Self-consistent Three-dimensional Model of Operation
-
-
Maćkowiak, P.1
-
30
-
-
0033880091
-
Material parameters for InGaAsP and InAlGaAs systems for use in quantum-wells structures at low and room temperatures
-
E.H. Li, "Material parameters for InGaAsP and InAlGaAs systems for use in quantum-wells structures at low and room temperatures", Physica E5, 215-273 (2000).
-
(2000)
Physica
, vol.E5
, pp. 215-273
-
-
Li, E.H.1
-
31
-
-
0012100550
-
Intervalence band absorption loss coefficients of the active layer for InP based long wavelength laser diodes
-
S. Kakimoto and H. Watanabe, "Intervalence band absorption loss coefficients of the active layer for InP based long wavelength laser diodes", J. Appl. Phys. 87, 2095-2097 (2000).
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 2095-2097
-
-
Kakimoto, S.1
Watanabe, H.2
-
32
-
-
0001078337
-
Intervalence band absorption in InP and related materials for optoelectronic device modeling
-
J. Taylor and V. Tolstikhin, "Intervalence band absorption in InP and related materials for optoelectronic device modeling", J. Appl. Phys. 87, 1054-1059 (2000).
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 1054-1059
-
-
Taylor, J.1
Tolstikhin, V.2
-
33
-
-
0037520358
-
Photoexcited carrier lifetime and Auger recombination in 1.3-μm InGaAsP
-
B. Sermage, H.J. Eichler, J.P. Heritage, R.J. Nelson, and N.K. Dutta, "Photoexcited carrier lifetime and Auger recombination in 1.3-μm InGaAsP", Appl. Phys. Lett. 42, 259-261 (1983).
-
(1983)
Appl. Phys. Lett.
, vol.42
, pp. 259-261
-
-
Sermage, B.1
Eichler, H.J.2
Heritage, J.P.3
Nelson, R.J.4
Dutta, N.K.5
|