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Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 282-290

Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy

(7) Alt, H Ch a Egorov, A Yu b Riechert, H b Wiedemann, B c Meyer, J D c Michelmann, R W c Bethge, K c

a University of Applied Science Munich and VWI (Germany)

b INFINEON TECHNOLOGIES AG (Germany)

c GOETHE UNIVERSITY (Germany)

Author keywords

GaAsN; InGaAsN; Local vibrational mode; Nitrogen

Indexed keywords

ENERGY GAP; INFRARED RADIATION; ION IMPLANTATION; LATTICE VIBRATIONS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TERNARY SYSTEMS; X RAY DIFFRACTION ANALYSIS;

LOCAL VIBRATIONAL MODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034979232 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00442-2 Document Type: Conference Paper

Times cited : (22)

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