Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Applied Physics Letters

Volumn 68, Issue 11, 1996, Pages 1510-1512

  Bandic Z Z ^a   Hauenstein, R J ^b   O'Steen, M L ^b   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DESORPTION; ELECTRON CYCLOTRON RESONANCE; ION EXCHANGE; KINETIC THEORY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE PHENOMENA;

ANION EXCHANGE; GALLIUM NITRIDE; SURFACE SEGREGATION PROCESS;

HETEROJUNCTIONS;

EID: 0030108680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115682     Document Type: Article

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