Trilayer wafer passivation structure for (100) oriented silicon

Electrochemical and Solid-State Letters

Volumn 8, Issue 10, 2005, Pages

  Pun, A F ^a   Wang, X ^a   Durbin, S M ^b   Zheng, J P ^a  

^a FAMU FSU COLLEGE OF ENGINEERING   (United States)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; PASSIVATION; SILICON WAFERS; SINGLE CRYSTALS; SURFACE PHENOMENA;

SILICON LAYERS; SILICON NATIVE OXIDES; SURFACE ROUGHENING; TRILAYER WAFER PASSIVATION;

SILICON;

EID: 25644448962     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2007387     Document Type: Article

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