A method for reducing surface roughness during the thermal desorption of silicon

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 136-139

  Pun, A F ^a   Wang, X ^a   Durbin, S M ^b   Zheng, J P ^a  

^a FAMU FSU COLLEGE OF ENGINEERING   (United States)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

Sacrificial layer; SiO2 thermal desoption; Surface roughness

Indexed keywords

DESORPTION; EPITAXIAL GROWTH; ETCHING; OXIDES; SILICON;

SACRIFICIAL LAYER; SIO2 THERMAL DESOPTION; SURFACE SMOOTHNESS; WAFER ETCHING;

SURFACE ROUGHNESS;

EID: 33644890153     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.165     Document Type: Conference Paper

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