How trace-analytical techniques contribute to the research and development of Ge and III/V semiconductor devices

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 173-181

  Hellin, D ^a,b   Rip, J ^a   Bonzom, R ^a   Nelis, D ^a,c   Sioncke, S ^a   Brammertz, G ^a   Caymax, M ^a   Meuris, M ^a   De Gendt, S ^a,b   Vinckier, C ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c HASSELT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; INTEGRATED CIRCUIT LAYOUT; MICROELECTRONICS; SILICON; SUBSTRATES; TRACE ANALYSIS;

CONTAMINATION CONTROL; DOPANT CONCENTRATIONS; GATE STACK; SEMICONDUCTOR SUBSTRATES;

SEMICONDUCTOR MATERIALS;

EID: 33846989008     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355806     Document Type: Conference Paper

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