Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-κ dielectric HfO2 layers

Analytical Sciences

Volumn 21, Issue 7, 2005, Pages 845-850

  Hellin, David ^a,b   Delabie, Annelies ^a   Puurunen, Riikka L ^a,d   Beaven, Peter ^c   Conard, Thierry ^a   Brijs, Bert ^a   De Gendt, Stefan ^a,b   Vinckier, Chris ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTE OF MATERIALS RESEARCH   (Germany)

^d VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; CHLORINE; ENERGY DISPERSIVE X RAY ANALYSIS; FLUORESCENCE; FLUORESCENCE SPECTROSCOPY; GATE DIELECTRICS; HAFNIUM OXIDES; LIGANDS; MICROELECTRONICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SPECTROMETRY; X RAY DIFFRACTION ANALYSIS; X RAYS;

CANDIDATE MATERIALS; CHEMICAL VAPOR DEPOSITIONS (CVD); COMPOSITIONAL ANALYSIS; GRAZING INCIDENCE; MICRO-ELECTRONIC DEVICES; RUTHERFORD BACKSCATTERING SPECTROMETRY; TOTAL REFLECTION X-RAY FLUORESCENCE SPECTROMETRIES; X RAY FLUORESCENCE SPECTROMETRY;

DIELECTRIC MATERIALS;

EID: 23944449632     PISSN: 09106340     EISSN: 13482246     Source Type: Journal    
DOI: 10.2116/analsci.21.845     Document Type: Article

References (20)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 2001, 89, 5243.
2. International Technology Roadmap for Semiconductors (ITRS) 2003 Edition (http://public.itrs.net).
3. S. M. George, A. W. Ott, and J. W. Klaus, J. Phys. Chem., 1996, 100, 13121.
4. M. Ritala and M. Leskelä, in "Handbook of Thin Film Materials", ed. H. S. Nalwa, 2002, Vol. 1, Academic, San Diego, 103.
5. R. L. Puurunen, Appl. Phys. Rev., accepted.
6. 2/TaN and SiON/TaN nMOS Transistors", Microelectronics Reliability, in press.
7. J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg, Thin Solid Films, 1999, 340, 110.
8. M. Ritala, M. Leskelä, L. Niinistö, T. Prohaska, G. Friedbacher, and M. Grassenbauer, Thin Solid Films, 1994, 250, 72.
9. R. J. Carter, W. Tsai, E. Young, M. Caymax, J. W. Maes, P. J. Chen, A. Delabie, C. Zhao, S. De Gendt, and M. Heyns, in "Novel Materials and Processes for Advanced CMOS", ed. M. I. Gardner, S. De Gendt, J.-P. Maria, and S. Stemmer, 2002, Material Research Society Proceedings, 745.
10. D. Blin, N. Rochat, G. Rolland, P. Holliger, F. Martin, J. - F. Damlencourt, T. Lardin, P. Besson, S. Haukka, and M. N. Semeria, in "ALTECH 2003 Analytical Techniques for Semiconductor Materials, Devices and Processes IV", ed. B. O. Kolbesen, C. L. Claeys, P. Stallhofer, and F. Tardif, 2003, Electrochemical Society Proceedings, PV2003-03, 233.
11. J. Spear, H. Murakami, and S. Terada, AIP Conference Proceedings, 2003, 683, 646.
12. R. L. Puurunen, A. Delabie, S. Van Elshocht, M. Caymax, M. L. Green, B. Brijs, O. Richard, H. Bender, T. Conard, I. Hoflijk, W. Vandervorst, D. Hellin, D. Vanhaeren, C. Zhao, S. De Gendt, and M. Heyns, Appl. Phys. Lett., 2005, 86, article No. 073116.
13. W. K. Chu, J. W. Mayer, and M. A. Nicolet, "Backscattering Spectrometry", 1978, Academic Press, New York.
14. C. Huyghebaert, T. Conard, and W. Vandervorst, Appl. Surf. Sci., 2004, 231-232, 552.
15. L. Fabry, S. Pahlke, L. Kotz, and G. Tölg, Fresenius J. Anal. Chem., 1994, 349, 260.
16. R. Klockenkämper, "TXRF-Analysis", 1997, Wiley, New York.
17. U. Weisbrod, R. Gutschke, J. Knoth, and H. Schwenke, Appl. Phys., 1991, 53A, 449.
18. D. K. G. de Boer and W. W. van den Hoogenhof, Spectrochim. Acta, Part B, 1991, 46, 1323.
19. H. Schwenke, R. Gutchke, and J. Knoth, Adv. X-Ray Anal., 1992, 35, 460.
20. Personal communication with H. Schwenke and J. Knoth, GKSS Research Center, Geesthacht, Germany.