GaN-based ultraviolet p-i-n photodiodes with buried p-layer structure grown by MOVPE

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Lee, M L ^a   Sheu, J K ^b  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DOPING (ADDITIVES); GROWTH (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAVIOLET DEVICES;

CONTACT LAYER; DARK CURRENT DENSITY; INVERTED DEVICES; PEAK RESPONSIVITY;

PHOTODIODES;

EID: 33846975136     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2426889     Document Type: Article

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