Defect evolution of low energy, amorphizing germanium implants in silicon

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2449-2452

  King, A C ^a   Gutierrez, A F ^a   Saavedra, A F ^a   Jones, K S ^a   Downey, D F ^b  

^a University of Florida   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON ENERGY LEVELS; GERMANIUM; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY;

TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0037349811     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542936     Document Type: Article

References (19)

1. E. Myers, G. A. Rozgonyi, D. K. Sadana, W. Maszara, J. J. Wortman, and J. Narayan, Mater. Res. Soc. Fall, Symp. B 52, 107 (1985).
2. M. C. Ozturk, J. J. Wortman, C. M. Osburn, A. Ajmera, G. A. Rozgonyi, E. Frey, W. K. Chu, and C. Lee, IEEE Trans. Electron Devices 35, 659 (1988).
3. S. N. Hong, G. A. Ruggles, J. J. Wortman, and M. C. Ozturk, IEEE Trans. Electron Devices 38, 476 (1991).
4. A. J. Murrel, E. J. Collart, and M. A. Foad, J. Vac. Sci. Technol. B 18, 462 (2000).
5. D. J. Eaglesham, P. A. Stolk, H. J. Gossman, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
6. K. S. Jones, J. Liu, L. Zhang, V. Krishnamoorthy, and R. T. DeHoff, Nucl. Instrum. Methods Phys. Res. B 106, 227 (1995).
7. D. J. Eaglesham, A. Agarwal, T. E. Haynes, H. J. Gossmann, D. C. Jacobson, and J. M. Poate, Nucl. Instrum. Methods Phys. Res. B 120, 1 (1996).
8. A. Agarwal, T. E. Haynes, D. J. Eaglesham, H. J. Gossmann, D. C. Jacobson, J. M. Poate, and Y. E. Erokhin, Appl. Phys. Lett. 70, 3332 (1997).
9. J. Li and K. S. Jones, Appl. Phys. Lett. 73, 3748 (1998).
10. N. E. B. Cowern, G. Mannino, F. Roozeboom, P. A. Stolk, H. G. Gossmann, H. G. A. Huizing, J. G. M. van Berkum, N. N. Toan, and P. H. Woerlee, 195th ECS Meeting, Seattle, WA, 1999.
11. M. A. Foad, A. J. Murrell, E. J. H. Collart, G. de Cock, D, Jennings, and M. I. Current, Mater. Res. Soc. Symp. Proc. 568, 55 (1999).
12. D. R. Lim, C. S. Rafferty, and F. P. Klemens, Appl. Phys. Lett. 67, 2302 (1995).
13. A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Y. E. Erokhin, Appl. Phys. Lett. 21, 3141 (1997).
14. C. D. Meekinson, C. Hill, C. D. Marsh, D. P. Gold, D. R. Boys, and G. R. Booker, Inst. Phys. Conf. Ser. 117, 197 (1991).
15. E. Ganin and A. Marwick, Mater. Res. Soc. 147, 13 (1989).
16. M. Omri, C. Bonafos, A. Claverie, A. Nejim, F. Cristano, D. Alquier, A. Martinez, and N. E. B. Cowern, Nucl. Instrum. Methods Phys. Res. B 120, 5 (1996).
17. T. E. Siedel, D. J. Lischner, C. S. Pai, R. V. Knoell, D. M. Maher, and D. C. Jacobson, Nucl. Instrum. Methods Phys. Res. B 7/8, 251 (1985).
18. F. J. Desmond, S. Kalbitzer, H. Mannsperger, and H. Damjantschitsch, Phys. Lett. 93A, 503 (1983).
19. W. Frank, U. Gosele, H. Mehrer, and A. Seger, Diffusion in Crystalline Solids (Academic, New York, 1984).