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Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 246-251

In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system

(6) LeThanh, V a Calmes, C a Zheng, Y b Bouchier, D a Fortuna, V a Dupuy, J C c

a UNIV PARIS SUD (France)

b UNIVERSITÉ PIERRE ET MARIE CURIE (France)

c INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

Author keywords

Methylsilane; Multilayer arrays; SiGeC Si heterostructures; Substitutional carbon

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MULTILAYERS; PARTIAL PRESSURE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MULTILAYER ARRAYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037074859 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00795-4 Document Type: Conference Paper

Times cited : (10)

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