Carbon incorporation pathways and lattice sites in Si 1-yC y alloys grown on Si(001) by molecular-beam epitaxy

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 5716-5727

  Park, S Y ^a   D'Arcy Gall, J ^a   Gall, D ^a   Soares, J A N T ^a   Kim, Y W ^a   Kim, H ^a   Desjardins, P ^a   Greene, J E ^a   Bishop, S G ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AB INITIO CALCULATIONS; ALLOY LAYERS; ANGLE RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY; C ATOMS; C INCORPORATION; CARBON INCORPORATION; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEPOSITION TEMPERATURES; DICARBON; EXPERIMENTAL PROBES; FORMATION ENERGIES; IN-SITU; LATTICE SITES; LATTICE STRAIN; PHOTOLUMINESCENCE MEASUREMENTS; PLANAR STRUCTURE; POST-DEPOSITION; SI(0 0 1); SPECTROSCOPY MEASUREMENTS; STRAIN COEFFICIENT; SUBSTITUTIONAL LATTICE SITES; SURFACE-ROUGHENING;

CALCULATIONS; DENSITY FUNCTIONAL THEORY; EPITAXIAL GROWTH; MOLECULAR BEAMS; PHOTOELECTRONS; RAMAN SPECTROSCOPY; SILICON; SURFACE SEGREGATION; TRANSMISSION ELECTRON MICROSCOPY;

SILICON ALLOYS;

EID: 0036572578     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1465122     Document Type: Article

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