Study of surface roughening of tensily strained Si1-x-yGexCy films grown by ultra high vacuum-chemical vapor deposition

Thin Solid Films

Volumn 428, Issue 1-2, 2003, Pages 150-155

  Calmes, C ^a   Bouchier, D ^a   Debarre, D ^a   Le Thanh, V ^a   Clerc, C ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

SiC; SiGeC; Surface roughening; Ultra high vacuum chemical vapor deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; DIFFUSION; FILM GROWTH; PARTIAL PRESSURE; REACTION KINETICS; SURFACE PROPERTIES; SURFACE ROUGHNESS; TENSILE STRESS;

GROWTH RATE;

SEMICONDUCTING FILMS;

EID: 0037457146     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01246-4     Document Type: Conference Paper

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