Base current control in low-VBE-operated SiGeC heterojunction bipolar transistors using SiGe-cap structure and high-carbon-content base

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2250-2254

  Saitoh, Tohru ^a   Kawashima, Takahiro ^a   Kanzawa, Yoshihiko ^a   Sato Iwanaga, Junko ^a   Idota, Ken ^a   Takagi, Takeshi ^a   Ohnishi, Teruhito ^a   Yuki, Koichiro ^a   Sano, Tsuneichiro ^a   Sawada, Shigeki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Base current; Heterojunction bipolar transistor; SiGe cap; SiGeC

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION; ELECTRONS; EMITTER COUPLED LOGIC CIRCUITS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BASE CURRENTS; COLLECTOR CURRENTS; RECOMBINATION PROCESSES; SIGE CAPS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 17044457387     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2250     Document Type: Conference Paper

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