Fabrication and characterization of strained Si1-yCy n-MOSFETs grown by Hot Wire Cell method

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 329-332

  Ishihara, Hanae ^a   Watahiki, Tatsuro ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Hot Wire Cell method; Low temperature Si epitaxy; MOSFET; Strained Si1 yCy

Indexed keywords

DEGRADATION; ELECTRON MOBILITY; INTERFACES (MATERIALS); STRESSES; SUBSTRATES; THIN FILMS;

HOT WIRE CELL METHOD; LOW-TEMPERATURE SI EPITAXY; MOSFET;

MOSFET DEVICES;

EID: 33646096240     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.337     Document Type: Article

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