Structure and stability of irradiation-induced Frenkel pairs in 3C-SiC using first principles calculations

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 255, Issue 1 SPEC. ISS., 2007, Pages 124-129

  Lucas, G ^a   Pizzagalli, L ^a  

^a UMR 6630 CNRS   (France)

Author keywords

68.55.Ln; 71.15.Mb; 81.05.Je; First principles calculations; Irradiation; Point defects; Silicon carbide

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL METHODS; IRRADIATION; NUCLEAR PHYSICS; POINT DEFECTS;

68.55.LN; 71.15.MB; 81.05.JE; FIRST PRINCIPLES CALCULATIONS;

SILICON CARBIDE;

EID: 33846947935     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.11.047     Document Type: Article

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