Experimental analysis of punch-through conditions in power P-I-N diodes

IEEE Transactions on Power Electronics

Volumn 22, Issue 1, 2007, Pages 13-20

  Salah, Tarek Ben ^a   Buttay, Cyril ^a   Allard, Bruno ^a   Morel, Hervé ^a   Ghédira, Sami ^b   Besbes, Kamel ^b  

^a Univ Claude Bernard Lyon1   (France)

^b Laboratoire de Microlectronique et Instrumentation   (Tunisia)

Author keywords

Avalanche; Intrinsic; n type (P I N) diode; P type; Punch through (PT); Reverse recovery

Indexed keywords

EPITAXIAL GROWTH; OPTIMIZATION; TRANSIENTS;

DIODE EPITAXIAL LAYER; POWER P-I-N DIODES; PUNCH-THROUGH CONDITIONS;

AVALANCHE DIODES;

EID: 33846926802     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2006.886648     Document Type: Article

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