Soft recovery characteristics of punch-Through power diodes by proton irradiation

Proceedings - IPEMC 2000: 3rd International Power Electronics and Motion Control Conference

Volumn 1, Issue , 2000, Pages 229-234

  Zhang, Changli ^c   Waldmeyer, Juerg ^a   Roggwiller, Peter ^a   Chen, Zhiming ^b   Lu, Yapeng ^c  

^a ABB SWITZERLAND LTD   (Switzerland)

^b XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^c Xi'an Power Electronics Research Institute   (China)

Author keywords

Local lifetime control; Power diode; Proton irradiation; Soft recovery

Indexed keywords

DIODES; ELECTRON IRRADIATION; IRRADIATION; MOTION CONTROL; POWER CONTROL; POWER ELECTRONICS; RECOVERY;

IRRADIATED DEVICES; IRRADIATION ENERGY; LIFETIME CONTROL; LOCAL LIFETIME CONTROL; POWER DIODE; PUNCH-THROUGH; REVERSE-RECOVERY CHARACTERISTICS; SOFTNESS FACTOR;

PROTON IRRADIATION;

EID: 0012455416     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEMC.2000.885362     Document Type: Conference Paper

References (3)

1. D. Silber, W. D. Nowak, W. Wondrak, B. Thomas, H. Berg, "Improved Dynamic Properties of GTO Thyristors and Diodes by Proton Implantation", IEDM Technical Digest, 1985, pp.162-165.
2. W. Wondrak, W. D. Nowak and B. Thomas, "Proton Implantation for Silicon Power Devices", in Proceedings of ISPSD'98, Tokyo, Japan pp. 147- 152.
3. B. Jayant Baliga, Power Semiconductor Devices, PWS Publishing Company, Chapter 4, pp. 16 1-1 67.