The p- layer punch-through structure with a thick, high concentration p emitter for a light-triggered thyristor

IEEE Transactions on Power Electronics

Volumn 17, Issue 6, 2002, Pages 1067-1072

  Katoh, Shuji ^a   Yamazumi, Saigou ^a   Watanabe, Atsuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

Photo thyristors; Power semiconductor devices; Thyristors

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; ELECTRIC WAVEFORMS; INSULATED GATE BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES;

FORWARD-BLOCKING VOLTAGE; LIGHT-TRIGGERED THYRISTOR; PHOTO THYRISTOR; POWER SEMICONDUCTOR DEVICE; SNUBBER CAPACITANCE;

THYRISTORS;

EID: 0036875657     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2002.805596     Document Type: Article

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