Physics-based dynamic electro-thermal models of power bipolar devices (PiN diode and IGBT)

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 381-384

  Igic, P M ^a   Mawby, P A ^a   Towers, M S ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CAPACITANCE; ELECTRIC CHARGE; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; POWER ELECTRONICS; SEMICONDUCTOR DIODES;

ELECTRO-THERMAL MODELS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034830053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Thermal component models for electrothermal network simulation
2. Choosing a thermal model for electrothermal simulation of power semiconductor devices
3. Electrothermal circuit simulation using simulator coupling