Performance evaluation of high-power GaAs Schottky and silicon p-i-n rectifiers in hard- and soft-switching applications

IEEE Transactions on Power Electronics

Volumn 13, Issue 3, 1998, Pages 441-451

  Pendharkar, Sameer ^b   Shenai, Krishna ^a,c  

^a IEEE

^b TEXAS INSTRUMENTS   (United States)

^c 1120 Science and Engineering Offices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOSSES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SWITCHING CIRCUITS; THERMAL EFFECTS;

CAPACITANCE VOLTAGE CHARACTERISTICS;

SOLID STATE RECTIFIERS;

EID: 0032073803     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.668105     Document Type: Review

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