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Volumn 2, Issue , 1998, Pages 1695-1703

Full dynamic power bipolar device models for circuit simulation

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATIONS; FULL DYNAMIC POWER BIPOLAR DEVICE MODELS;

EID: 0031623655     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (13)

References (18)
  • 1
    • 0024144498 scopus 로고
    • Modeling and simulation of power MOSFETs and power diodes
    • C.H. Xu and D. Schroder, «Modeling and Simulation of Power MOSFETs and Power Diodes », IEEE PESC Rec, 1988, pp. 76-83.
    • (1988) IEEE PESC Rec , pp. 76-83
    • Xu, C.H.1    Schroder, D.2
  • 2
    • 0025497993 scopus 로고
    • An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)
    • A. Hefner, « An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)», IEEE Trans. Power Electronics, Vol. 5, 1990, pp.459-468.
    • (1990) IEEE Trans. Power Electronics , vol.5 , pp. 459-468
    • Hefner, A.1
  • 3
    • 0028132467 scopus 로고
    • State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: A novel approach
    • H. Morel, S.H. Gamal and J-P. Chante, « State Variable Modeling of the Power Pin Diode Using an Explicit Approximation of Semiconductor Device Equations: a Novel Approach », IEEE Trans. Power Electronics, Vol. 9, 1994, pp. 112-120.
    • (1994) IEEE Trans. Power Electronics , vol.9 , pp. 112-120
    • Morel, H.1    Gamal, S.H.2    Chante, J.-P.3
  • 5
    • 0030869836 scopus 로고    scopus 로고
    • A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation
    • A.G.M. Strollo, « A New SPICE Model of Power P-I-N Diode Based on Asymptotic Waveform Evaluation », IEEE Trans. Power Electronics, Vol. 12, 1997, pp. 12-20
    • (1997) IEEE Trans. Power Electronics , vol.12 , pp. 12-20
    • Strollo, A.G.M.1
  • 6
    • 0031147313 scopus 로고    scopus 로고
    • Modeling of power diodes with the lumped-charge modeling technique
    • C.L. Ma, P.O. Lauritzen and J. Sigg, « Modeling of Power Diodes with the Lumped-Charge Modeling Technique», IEEE Trans. Power Electronics, Vol. 12, 1997, pp.398-405.
    • (1997) IEEE Trans. Power Electronics , vol.12 , pp. 398-405
    • Ma, C.L.1    Lauritzen, P.O.2    Sigg, J.3
  • 7
    • 0347780072 scopus 로고
    • Analog solution to the ambipolar difiusion equation
    • Serie II-b
    • P. Gillet, M. Kallala, J-L. Massol and Ph. Leturcq, «Analog Solution to the Ambipolar Difiusion Equation », C.7;. Acad. Sc. Paris, t.321, Serie II-b, 1995, pp. 53-59.
    • (1995) C.7;. Acad. Sc. Paris , vol.321 , pp. 53-59
    • Gillet, P.1    Kallala, M.2    Massol, J.-L.3    Leturcq, Ph.4
  • 8
    • 0029748173 scopus 로고    scopus 로고
    • Implementation and validation of a new diode model for circuit simulation
    • Ph. Leturcq, M.O. Berraies and J-L. Massol, « Implementation and Validation of a New Diode Model for Circuit Simulation », IEEE PESC Rec, Vol.1, 1996, pp. 35-43.
    • (1996) IEEE PESC Rec , vol.1 , pp. 35-43
    • Leturcq, Ph.1    Berraies, M.O.2    Massol, J.-L.3
  • 9
    • 33644911400 scopus 로고    scopus 로고
    • A distributed model of IGBTs for circuit simulation
    • Ph. Leturcq, M. O. Berraies and J-L. Debrie, « A Distributed Model of IGBTs for Circuit Simulation », EPE'97Proc, 1997, pp.1.494-1.501.
    • (1997) EPE'97Proc , pp. 1494-1501
    • Leturcq, Ph.1    Berraies, M.O.2    Debrie, J.-L.3
  • 10
    • 0031333752 scopus 로고    scopus 로고
    • A distributed regional modeling approach for power bipolar devices in circuit simulation
    • M.O. Berraies and Ph. Leturcq, « A Distributed Regional Modeling Approach for Power Bipolar Devices in Circuit Simulation », BCTM Proc, 1997, pp. 131-134.
    • (1997) BCTM Proc , pp. 131-134
    • Berraies, M.O.1    Leturcq, Ph.2
  • 11
    • 84946964735 scopus 로고
    • Full dynamic power diode model including temperature behavior for use in circuit simulator
    • H. Goebel and K. Hoffnan, «Full Dynamic Power Diode Model Including Temperature Behavior for use in Circuit Simulator », ISPD&ICs Proc, 1992, pp.130-135.
    • (1992) ISPD&ICs Proc , pp. 130-135
    • Goebel, H.1    Hoffnan, K.2
  • 12
    • 0014493888 scopus 로고
    • On the effective carrier lifetime in p-s-n rectifiers at high injection levels
    • H. Sclangenotto and W. Gerlach, «On the Effective Carrier Lifetime in p-s-n Rectifiers at High Injection Levels», Solid-State Electron., Vol. 12, 1969, pp. 267-275.
    • (1969) Solid-State Electron. , vol.12 , pp. 267-275
    • Sclangenotto, H.1    Gerlach, W.2
  • 15
    • 84893945428 scopus 로고    scopus 로고
    • Stansim Research ApS, Skovparken 9, DK-2990 Niva, Denmark
    • P. Stangerup, «ESACAP», Stansim Research ApS, Skovparken 9, DK-2990 Niva, Denmark.
    • ESACAP
    • Stangerup, P.1
  • 18
    • 84893937977 scopus 로고    scopus 로고
    • Siemens IGBT Modules Data Book 91/92 (BSM 50 GB 100 D)
    • Siemens IGBT Modules Data Book 91/92 (BSM 50 GB 100 D)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.