Analysis of parasitic resistance and channel sheet conductance of a-Si:H TFT under mechanical bending

Electrochemical and Solid-State Letters

Volumn 10, Issue 3, 2007, Pages

  Wang, M C ^a   Chang, T C ^b,e   Liu, Po Tsun ^c   Tsao, S W ^d   Chen, J R ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRENGTH; CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC CONDUCTANCE; SILICON; TENSILE TESTING;

COMPRESSIVE BENDING; MECHANICAL STRAIN; PARASITIC RESISTANCE; SOURCE-DRAIN;

THIN FILM TRANSISTORS;

EID: 33846633750     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2428478     Document Type: Article

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