Characterization of high quality RTCVD relaxed Si1-xGex grown on Ge graded buffer layers on Si by photoluminescence spectroscopy

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1023-1027

  Bremond, G ^a   Souifi, A ^a   De Barros, O ^a   Benmansour, A ^a   Ducroquet, F ^a,c   Warren, P ^b   Dutartre, D ^b  

^a UNIVERSITÉ DE LYON   (France)

^b ORANGE LABS   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

Photoluminescence; RTCVD; SiGe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EMISSION SPECTROSCOPY; FILMS; GERMANIUM ALLOYS; PHOTOLUMINESCENCE; SILICON;

BUFFER LAYERS; CAPPING LAYER; ELECTRONIC QUALITY; MISFIT DISLOCATIONS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; SILICON GERMANIDE;

SILICON ALLOYS;

EID: 0030180585     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659897     Document Type: Article

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