Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD

Microelectronics Journal

Volumn 38, Issue 2 SPEC. ISS., 2007, Pages 255-258

  Zhou, J ^a   Ren, X M ^a   Wang, Q ^b   Xiong, D P ^a   Huang, H ^a   Huang, Y Q ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Competition effect; Epitaxial lateral overgrowth (ELO); InP; Metalorganic chemical vapor (MOCVD)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODEPOSITION; EPITAXIAL GROWTH; GROWTH KINETICS; SURFACE TREATMENT;

COMPETITION EFFECTS; EPITAXIAL LATERAL OVERGROWTH (ELO); INP; METALORGANIC CHEMICAL VAPOR (MOCVD);

INDIUM COMPOUNDS;

EID: 33846562085     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.11.003     Document Type: Article

References (15)

1. Berger P.R., Dutta N.K., Sivco D.L., and Cho A.Y. GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth. Appl. Phys. Lett. 59 (1991) 2828
2. Heinecke H., Wachter M., and Schöffel U. Facet formation and characterization of III-V structures grown on patterned surfaces. Microelectron. J. 28 (1997) 803
3. Verschuren C.A., Harmsma P.J., Oei Y.S., Leys M.R., Vonk H., and Wolter J.H. Butt-coupling loss of 0.1dB/interface in InP/InGaAs multiple quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxy. Semicond. Sci. Technol. 13 (1998) A169
4. Bouda M., and Nakano Y. Development of metal-organic vapor phase enhanced selective area epitaxy, a novel metal-organic vapor phase epitaxy selective area growth technique, and its application to muti-mode interference device fabrication. Jpn. J. Appl. Phys. 38 (1999) 1029
5. Y.T. Sun, K. Baskar, J. Berggren, S. Lourdudoss, InGaAsP muti-quantum wells at 1.5 μm wavelength grown on indium phosphide templates on silicon. in: 15th International Conference on Indium Phosphide and Related Materials, IEEE, Santa Barabara, CA, USA 277 2003.
6. Akabori M., Takeda J., Motohisa J., and Fukui T. InGaAs nano-pillar array formation on partially masked InP(1 1 1)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application. Nanotechnology 14 (2003) 1071
7. Greenspan J.E., Campbell S., and Shih I. A multiple quantum well integrated with a selectively grown quaternary layer. Semicond. Sci. Technol. 21 (2006) 866
8. Xiong D.P., Wang Q., Ren A.G., Huang H., Huang Y.Q., and Ren X.M. Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates. Proc. SPIE Int. Soc. Opt. Eng. (2005) 6020
9. 2 areas via metalorganic vapor phase epitaxy. J. Electron. Mater. 27 4 (1998) 233
10. Stringfellow G.B. Organometallic Vapour Phase Epitaxy: Theory and Practice (1989), Academic, London
11. Kayser O., Westphalen R., Opitz B., and Balk P. Control of selective area growth of InP. J. Cryst. Growth 112 (1991) 111
12. Oh Ho J., Sugiyama M., Nakano Y., and Shimogaki Y. Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth. Jpn. J. Appl. Phys. 42 (2003) 6284
13. Ujihara T., Yoshida Y., Lee W.S., and Takeda Y. Pattern size effect on source supply process for sub-micrometer scale selective area growth by organometallic vapor phase epitxay. J. Cryst. Growth 289 (2006) 89
14. Gibbon M., Stagg J.P., Cureton C.G., Thrush E.J., Jones C.J., Mallard R.E., Pritchard R.E., Collis N., and Chew A. Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates. Semicond. Sci. Technol. 8 (1993) 998
15. Greenspan J.E., Zhang X., Puetz N., and Emmerstorfer B. Growth mechanisms and modeling for metalorganic chemical vapor deposition selective-area epitaxy on InP substrates. J. Val. Sci. Technol. A 18 (2000) 648