InGaAsP multi-quantum wells at 1.5 μM wavelength grown on indium phosphide templates on silicon

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 277-280

  Sun, Y T ^a   Baskar, K ^a   Berggren, J ^a   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STRAIN; SULFUR; ATOMIC LAYER DEPOSITION; DOPPLER EFFECT; EPITAXIAL GROWTH; INDIUM; INDIUM PHOSPHIDE; INTERFACES (MATERIALS); MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON; SUBSTRATES; SURFACE MORPHOLOGY; SURFACE WAVES; TELECOMMUNICATION REPEATERS; TENSILE STRAIN; VAPOR PHASE EPITAXY;

INDIUM GALLIUM ARSENIDE PHOSPHIDE; TENSILE STRAIN; THERMAL STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EPITAXIAL LATERAL OVERGROWTH; HYDRIDE VAPOR PHASE EPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY; NON-PLANAR SUBSTRATES; OPTICAL SURFACE WAVES; QUANTUM WELL DEVICE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; THERMAL TENSILE STRAIN;

EID: 0038148567     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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