Development of metal-organic vapor phase diffusion enhanced selective area epitaxy, a novel metal-organic vapor phase epitaxy selective area growth technique, and its application to multi-mode interference device fabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1029-1033

  Bouda, Martin ^a,b   Nakano, Yoshiaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Metalorganic vapor phase epitaxy; MMI; MOVPE; Multimode interference; Photonic integration; SAG; Vapor phase diffusion enhanced selective area growth

Indexed keywords

ENERGY GAP; INTEGRATED OPTOELECTRONICS; LIGHT INTERFERENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

MULTIMODE INTERFERENCE; PHOTONIC INTEGRATION; SELECTIVE AREA GROWTH;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0032677704     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1029     Document Type: Article

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