-
2
-
-
0001761950
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Selective growth of GaAs in the MOMBE and MOCVD systems
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Heinecke, H., Brauers, A., Grafahrend, F., Plass, C., Pütz, N., Werner, K., Weyers, M., Lüth, H. and Balk, P. Selective growth of GaAs in the MOMBE and MOCVD systems J. Cryst. Growth, 77 (1986) 303.
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J. Cryst. Growth
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Heinecke, H.1
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Plass, C.4
Pütz, N.5
Werner, K.6
Weyers, M.7
Lüth, H.8
Balk, P.9
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3
-
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0027904611
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Surface selective growth of GaInAsP heterostructures by metalorganic MBE
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Heinecke, H. Surface selective growth of GaInAsP heterostructures by metalorganic MBE. J. Cryst. Growth, 127 (1993) 126.
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(1993)
J. Cryst. Growth
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Heinecke, H.1
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4
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0028201640
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Growth mechanism on patterned surfaces and applications using metalorganic growth technologies
-
Santa Barbara
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H. Heinecke and E. Veuhoff, Growth mechanism on patterned surfaces and applications using metalorganic growth technologies, Proc. 6th Int. Conf. on Indium Phosphide and Related Materials, Santa Barbara, 1994, pp. 636-639.
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(1994)
Proc. 6th Int. Conf. on Indium Phosphide and Related Materials
, pp. 636-639
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Heinecke, H.1
Veuhoff, E.2
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5
-
-
0030191982
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Beam geometrical effects on planar SAE of InP/GaInAs heterostructures
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Wachter, M. and Heinecke, H. Beam geometrical effects on planar SAE of InP/GaInAs heterostructures. J. Cryst. Growth, 164 (1996) 302.
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(1996)
J. Cryst. Growth
, vol.164
, pp. 302
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Wachter, M.1
Heinecke, H.2
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6
-
-
0030193397
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Growth of GaInAs(P) using a multiwafer MOMBE
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Marheineke, B., Popp, M. and Heinecke, H. Growth of GaInAs(P) using a multiwafer MOMBE. J. Cryst. Growth, 164 (1996) 16.
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(1996)
J. Cryst. Growth
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, pp. 16
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Marheineke, B.1
Popp, M.2
Heinecke, H.3
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7
-
-
0030646556
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Evaluation of cracking efficiency of As and P precursors
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D. Ritter and H. Heinecke, Evaluation of cracking efficiency of As and P precursors, J. Cryst. Growth, 170 (1997) 149.
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(1997)
J. Cryst. Growth
, vol.170
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Ritter, D.1
Heinecke, H.2
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8
-
-
0030704063
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Growth of 1-55 μm DH laserstructures using TBAs and TBP in MOMBE
-
M. Keidler, M. Popp, B. Marheineke, H. Heinecke, H. Baumeister and E. Veuhoff, Growth of 1-55 μm DH laserstructures using TBAs and TBP in MOMBE, J. Cryst. Growth, 170 (1997) 161.
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(1997)
J. Cryst. Growth
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Keidler, M.1
Popp, M.2
Marheineke, B.3
Heinecke, H.4
Baumeister, H.5
Veuhoff, E.6
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9
-
-
0005909491
-
-
G.J. Davies, J.S. Foord and W.T. Tsang (eds), John Wiley
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H. Heinecke and G.J. Davies, Chemical Beam Epitaxy and Related Techniques, G.J. Davies, J.S. Foord and W.T. Tsang (eds), 1997, John Wiley, p. 331.
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(1997)
Chemical Beam Epitaxy and Related Techniques
, pp. 331
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Heinecke, H.1
Davies, G.J.2
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10
-
-
0026193066
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Selective area growth for optoelectronic integrated circuits
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Davies, G.J., Duncan, W.J., Skevington, P.J., French, C.L. and Foord, J.S. Selective area growth for optoelectronic integrated circuits. Mater. Sci. Eng., B9 (1991) 93.
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Mater. Sci. Eng.
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Davies, G.J.1
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Skevington, P.J.3
French, C.L.4
Foord, J.S.5
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11
-
-
0026944464
-
Effect of surface orientation on GaInAsP material composition in MOMBE (CBE)
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Heinecke, H., Baur, B., Höger, R., Jobst, B. and Miklis, A. Effect of surface orientation on GaInAsP material composition in MOMBE (CBE). J. Cryst. Growth, 124 (1992) 170.
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J. Cryst. Growth
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Heinecke, H.1
Baur, B.2
Höger, R.3
Jobst, B.4
Miklis, A.5
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12
-
-
0027904808
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Facet growth in selective area epitaxy of InP by metalorganic MBE
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Matz, R., Heinecke, H., Baur, B., Primig, R. and Cremer, C. Facet growth in selective area epitaxy of InP by metalorganic MBE. J. Cryst. Growth, 127 (1993) 230.
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(1993)
J. Cryst. Growth
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Matz, R.1
Heinecke, H.2
Baur, B.3
Primig, R.4
Cremer, C.5
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14
-
-
0026946796
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Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE)
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Heinecke, H., Baur, B., Miklis, A., Matz, R., Cremer, C. and Höger, R. Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE). J. Cryst. Growth, 124 (1992) 186.
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J. Cryst. Growth
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Heinecke, H.1
Baur, B.2
Miklis, A.3
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Cremer, C.5
Höger, R.6
-
15
-
-
0028750434
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Novel III/V heterostructures fabricated by metalorganic molecular beam epitaxy
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Heinecke, H., Milde, A., Matz, R., Baur, B. and Primig, R. Novel III/V heterostructures fabricated by metalorganic molecular beam epitaxy. Phys. Scr., T55 (1994) 14.
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(1994)
Phys. Scr.
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Heinecke, H.1
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Baur, B.4
Primig, R.5
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16
-
-
30244455798
-
Anisotropic surface diffusion at crystal facet transitions during localized Ga-In-As-P growth by MOMBE
-
this issue
-
M. Wachter, C. Menke and H. Heinecke, Anisotropic surface diffusion at crystal facet transitions during localized Ga-In-As-P growth by MOMBE, Microelectronics J. (this issue).
-
Microelectronics J.
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Wachter, M.1
Menke, C.2
Heinecke, H.3
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17
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-
30244456169
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Characterization of III/V heterostructures grown by selective area epitaxy using double-crystal X-ray diffractrometry with high lateral resolution
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Iberl, A., Göbel, H. and Heinecke, H. Characterization of III/V heterostructures grown by selective area epitaxy using double-crystal X-ray diffractrometry with high lateral resolution J. Phys. D: Appl Phys., 28 A (1995) 172.
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J. Phys. D: Appl Phys.
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Iberl, A.1
Göbel, H.2
Heinecke, H.3
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18
-
-
26144455864
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Microfocus double crystal X-ray diffractrometry on III/V heterostructures grown by selective area epitaxy
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Iberl, A., Schuster, M., Göbel, H., Meyer, A., Baur, B., Matz, R., Snigirev, A., Snigireva, I., Freund, A., Lengeler, B. and Heinecke, H. Microfocus double crystal X-ray diffractrometry on III/V heterostructures grown by selective area epitaxy. J. Phys. D: Appl. Phys., 28 A (1995) 200.
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Iberl, A.1
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Matz, R.6
Snigirev, A.7
Snigireva, I.8
Freund, A.9
Lengeler, B.10
Heinecke, H.11
-
19
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-
0031144255
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Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE
-
in press
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M. Wachter, U. Schöffel, M. Schier and H. Heinecke, Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE, J. Cryst. Growth (in press) (1997).
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(1997)
J. Cryst. Growth
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Wachter, M.1
Schöffel, U.2
Schier, M.3
Heinecke, H.4
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20
-
-
0031142758
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Full gaseous source growth of separate confinement MQW 1·55 μm laser structures in a production MOMBE
-
in press
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M. Popp, H. Heinecke, H. Baumeister and E. Veuhoff, Full gaseous source growth of separate confinement MQW 1·55 μm laser structures in a production MOMBE, J. Cryst. Growth (in press) (1997).
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(1997)
J. Cryst. Growth
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Popp, M.1
Heinecke, H.2
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Veuhoff, E.4
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