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Volumn 28, Issue 8-10, 1997, Pages 803-815

Facet formation and characterization of III-V structures grown on patterned surfaces

Author keywords

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Indexed keywords


EID: 0346790375     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00119-x     Document Type: Article
Times cited : (5)

References (20)
  • 3
    • 0027904611 scopus 로고
    • Surface selective growth of GaInAsP heterostructures by metalorganic MBE
    • Heinecke, H. Surface selective growth of GaInAsP heterostructures by metalorganic MBE. J. Cryst. Growth, 127 (1993) 126.
    • (1993) J. Cryst. Growth , vol.127 , pp. 126
    • Heinecke, H.1
  • 4
    • 0028201640 scopus 로고
    • Growth mechanism on patterned surfaces and applications using metalorganic growth technologies
    • Santa Barbara
    • H. Heinecke and E. Veuhoff, Growth mechanism on patterned surfaces and applications using metalorganic growth technologies, Proc. 6th Int. Conf. on Indium Phosphide and Related Materials, Santa Barbara, 1994, pp. 636-639.
    • (1994) Proc. 6th Int. Conf. on Indium Phosphide and Related Materials , pp. 636-639
    • Heinecke, H.1    Veuhoff, E.2
  • 5
    • 0030191982 scopus 로고    scopus 로고
    • Beam geometrical effects on planar SAE of InP/GaInAs heterostructures
    • Wachter, M. and Heinecke, H. Beam geometrical effects on planar SAE of InP/GaInAs heterostructures. J. Cryst. Growth, 164 (1996) 302.
    • (1996) J. Cryst. Growth , vol.164 , pp. 302
    • Wachter, M.1    Heinecke, H.2
  • 6
    • 0030193397 scopus 로고    scopus 로고
    • Growth of GaInAs(P) using a multiwafer MOMBE
    • Marheineke, B., Popp, M. and Heinecke, H. Growth of GaInAs(P) using a multiwafer MOMBE. J. Cryst. Growth, 164 (1996) 16.
    • (1996) J. Cryst. Growth , vol.164 , pp. 16
    • Marheineke, B.1    Popp, M.2    Heinecke, H.3
  • 7
    • 0030646556 scopus 로고    scopus 로고
    • Evaluation of cracking efficiency of As and P precursors
    • D. Ritter and H. Heinecke, Evaluation of cracking efficiency of As and P precursors, J. Cryst. Growth, 170 (1997) 149.
    • (1997) J. Cryst. Growth , vol.170 , pp. 149
    • Ritter, D.1    Heinecke, H.2
  • 11
    • 0026944464 scopus 로고
    • Effect of surface orientation on GaInAsP material composition in MOMBE (CBE)
    • Heinecke, H., Baur, B., Höger, R., Jobst, B. and Miklis, A. Effect of surface orientation on GaInAsP material composition in MOMBE (CBE). J. Cryst. Growth, 124 (1992) 170.
    • (1992) J. Cryst. Growth , vol.124 , pp. 170
    • Heinecke, H.1    Baur, B.2    Höger, R.3    Jobst, B.4    Miklis, A.5
  • 12
    • 0027904808 scopus 로고
    • Facet growth in selective area epitaxy of InP by metalorganic MBE
    • Matz, R., Heinecke, H., Baur, B., Primig, R. and Cremer, C. Facet growth in selective area epitaxy of InP by metalorganic MBE. J. Cryst. Growth, 127 (1993) 230.
    • (1993) J. Cryst. Growth , vol.127 , pp. 230
    • Matz, R.1    Heinecke, H.2    Baur, B.3    Primig, R.4    Cremer, C.5
  • 14
    • 0026946796 scopus 로고
    • Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE)
    • Heinecke, H., Baur, B., Miklis, A., Matz, R., Cremer, C. and Höger, R. Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE). J. Cryst. Growth, 124 (1992) 186.
    • (1992) J. Cryst. Growth , vol.124 , pp. 186
    • Heinecke, H.1    Baur, B.2    Miklis, A.3    Matz, R.4    Cremer, C.5    Höger, R.6
  • 15
    • 0028750434 scopus 로고
    • Novel III/V heterostructures fabricated by metalorganic molecular beam epitaxy
    • Heinecke, H., Milde, A., Matz, R., Baur, B. and Primig, R. Novel III/V heterostructures fabricated by metalorganic molecular beam epitaxy. Phys. Scr., T55 (1994) 14.
    • (1994) Phys. Scr. , vol.T55 , pp. 14
    • Heinecke, H.1    Milde, A.2    Matz, R.3    Baur, B.4    Primig, R.5
  • 16
    • 30244455798 scopus 로고    scopus 로고
    • Anisotropic surface diffusion at crystal facet transitions during localized Ga-In-As-P growth by MOMBE
    • this issue
    • M. Wachter, C. Menke and H. Heinecke, Anisotropic surface diffusion at crystal facet transitions during localized Ga-In-As-P growth by MOMBE, Microelectronics J. (this issue).
    • Microelectronics J.
    • Wachter, M.1    Menke, C.2    Heinecke, H.3
  • 17
    • 30244456169 scopus 로고
    • Characterization of III/V heterostructures grown by selective area epitaxy using double-crystal X-ray diffractrometry with high lateral resolution
    • Iberl, A., Göbel, H. and Heinecke, H. Characterization of III/V heterostructures grown by selective area epitaxy using double-crystal X-ray diffractrometry with high lateral resolution J. Phys. D: Appl Phys., 28 A (1995) 172.
    • (1995) J. Phys. D: Appl Phys. , vol.28 A , pp. 172
    • Iberl, A.1    Göbel, H.2    Heinecke, H.3
  • 19
    • 0031144255 scopus 로고    scopus 로고
    • Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE
    • in press
    • M. Wachter, U. Schöffel, M. Schier and H. Heinecke, Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE, J. Cryst. Growth (in press) (1997).
    • (1997) J. Cryst. Growth
    • Wachter, M.1    Schöffel, U.2    Schier, M.3    Heinecke, H.4
  • 20
    • 0031142758 scopus 로고    scopus 로고
    • Full gaseous source growth of separate confinement MQW 1·55 μm laser structures in a production MOMBE
    • in press
    • M. Popp, H. Heinecke, H. Baumeister and E. Veuhoff, Full gaseous source growth of separate confinement MQW 1·55 μm laser structures in a production MOMBE, J. Cryst. Growth (in press) (1997).
    • (1997) J. Cryst. Growth
    • Popp, M.1    Heinecke, H.2    Baumeister, H.3    Veuhoff, E.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.