BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 320-324

  Akasaka, Tetsuya ^a   Kobayashi, Yasuyuki ^a   Makimoto, Toshiki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

A3. Low pressure metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; SAPPHIRE;

ELECTRON GAS MOBILITY; EPITAXIAL LATERAL OVERGROWTH PROCESS; GROWTH MECHANISM; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY;

FILM GROWTH;

EID: 33846465024     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.033     Document Type: Article

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