Optical properties of GaInNAs quantum wells on misoriented substrates grown by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 116-120

  Ishizuka, Takashi ^a   Doi, Hideyuki ^a   Katsuyama, Tsukuru ^a   Hashimoto, Jun ^b   Nakayama, Masaaki ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

A1. Photoluminescence; A1. Substrates; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BAND EDGE ENERGY; BAND EDGE TRANSITIONS; PHOTOREFLECTANCE (PR) SPECTROSCOPY; SEMICONDUCTING MATERIALS;

SEMICONDUCTOR GROWTH;

EID: 33846452932     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.011     Document Type: Article

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