![]() |
Volumn 298, Issue SPEC. ISS, 2007, Pages 116-120
|
Optical properties of GaInNAs quantum wells on misoriented substrates grown by MOVPE
|
Author keywords
A1. Photoluminescence; A1. Substrates; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials
|
Indexed keywords
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
BAND EDGE ENERGY;
BAND EDGE TRANSITIONS;
PHOTOREFLECTANCE (PR) SPECTROSCOPY;
SEMICONDUCTING MATERIALS;
SEMICONDUCTOR GROWTH;
|
EID: 33846452932
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.011 Document Type: Article |
Times cited : (4)
|
References (12)
|