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Volumn 298, Issue SPEC. ISS, 2007, Pages 116-120

Optical properties of GaInNAs quantum wells on misoriented substrates grown by MOVPE

Author keywords

A1. Photoluminescence; A1. Substrates; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EID: 33846452932     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.011     Document Type: Article
Times cited : (4)

References (12)
  • 4
    • 0037810846 scopus 로고    scopus 로고
    • T. Ishizuka, Y. Iguchi, T. Yamada, T. Katsuyama, S. Takagishi, M. Murata, J. Hashimoto, A. Ishida, in: Proceedings 2003 of the International Conference on InP and Related Material, Santa Barbara, CA, USA, 2003, p. 273.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.