Localization characteristics of photoluminescence decay dynamics in an InxGa1-xAs1-yNy/GaAs single quantum well

Physica Status Solidi (B) Basic Research

Volumn 240, Issue 2, 2003, Pages 352-355

  Nakayama, M ^a   Tokuoka, K ^a   Nomura, K ^a   Yamada, T ^b   Moto, A ^b   Takagishi, S ^b  

^a Osaka Prefecture University   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344064303     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303260     Document Type: Conference Paper

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