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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 2082-2083

Excitation intensity dependence of photoluminescence spectra in GaInNAs single quantum wells

(3) Shirakata, Sho a,b Kondow, Masahiko a Kitatani, Takeshi a

a EHIME UNIVERSITY (Japan)

b HITACHI LTD (Japan)

Author keywords

Carrier localization; Excitation intensity dependence; GaInNAs; Photoluminescence; Single quantum well

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

CARRIER LOCALIZATION; EXCITATION INTENSITY DEPENDENCE; FULL WIDTH AT HALF MAXIMUM; NEUTRAL DENSITY FILTER; TRANSITION ENERGY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036529335 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.2082 Document Type: Article

Times cited : (12)

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