Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well

Journal of Luminescence

Volumn 112, Issue 1, 2005, Pages 146-150

  Nomura, K ^a   Yamada, T ^b   Iguchi, Y ^b   Takagishi, S ^b   Nakayama, M ^a  

^a Osaka Prefecture University   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Disordered system; Localized state; Photoluminescence; Stretched exponential decay

Indexed keywords

ALLOYING; CRYSTAL LATTICES; GALLIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

DISORDERED SYSTEMS; LOCALIZED STATES; OPTICAL TRANSITIONS; STRETCHED EXPONENTIAL DECAY;

PHOTOLUMINESCENCE;

EID: 15544375995     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2004.09.014     Document Type: Conference Paper

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