Effect of substrate orientation on photoluminescence of GaNAs

Japanese journal of applied physics

Volumn 39, Issue 12 B, 2000, Pages 1267-1269

  Moto, Akihiro ^a,b   Takahashi, Mitsuo ^a   Takagishi, Shigenori ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC EXCITATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE;

GALLIUM NITRIDE ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034472260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1267     Document Type: Article

References (23)