Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 767-771

  Wu, Pei Hsuan ^a   Su, Yan Kuin ^a   Chen, I Liang ^a   Chen, Shang Fu ^b   Chiou, Chih Hung ^c   Guo, Sheng Huei ^c   Hsu, Jung Tsung ^c   Chen, Wen Ray ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

A1. Antiphase domain; A1. Morphology; B3. Solar cell

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE STRUCTURE;

ANTIPHASE DOMAINS (APD); GROWTH CONDITIONS; GROWTH TEMPERATURES; MULTI-JUNCTION SOLAR CELLS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33846444719     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.159     Document Type: Article

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