Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: Effect of off-orientation

Materials Research Bulletin

Volumn 35, Issue 6, 2000, Pages 909-919

  Hudait, Mantu Kumar ^a,b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLAR CELLS; SUBSTRATES; THIN FILMS;

LOW-PRESSURE METAL-ORGANIC VAPOR PHASE EPITAXY (LPMOVPE) METHOD;

HETEROJUNCTIONS;

EID: 0034171580     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(00)00278-6     Document Type: Article

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