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Journal of Materials Science

Volumn 36, Issue 17, 2001, Pages 4209-4222

Formation, faceting, and interaction behaviors of antiphase boundaries in GaAs thin films

(2) Cho, N H a Carter, C B b

a Inha University (South Korea)

b UNIVERSITY OF MINNESOTA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; GRAIN BOUNDARIES; METALLORGANIC VAPOR PHASE EPITAXY; PHASE TRANSITIONS; SEMICONDUCTING GERMANIUM; STOICHIOMETRY; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ANTIPHASE BOUNDARIES; FACETING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035444782 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1023/A:1017981324721 Document Type: Article

Times cited : (17)

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