Effect of growth parameters on the MOVPE of GaAs/Ge for solar cell applications

Solar Energy Materials and Solar Cells

Volumn 59, Issue 1, 1999, Pages 19-26

  Agarwal, S K ^a   Tyagi, R ^a   Singh, M ^a   Jain, R K ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

CRYSTALLINE QUALITY;

SOLAR CELLS;

EID: 0032684935     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00027-6     Document Type: Article

References (5)

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3. Iles P.A., Chuan Yea, Yeh M., Ho F.H., Chu Chaw-Long, Chung C. IEEE Electron Device Lett. 114:1990;140.
4. H. Yoo, J. Krogen, P.A. Iles, 22nd IEEE Photovoltaic Specialist Conference 1991.
5. Flores C., Bolani B., Campesato R., Passoni, Paletta F., Timo L., Tosoni A., Crabb R.L. Inst. Phys. Conf. Ser. No. 112:1990;591.