Epitaxial lateral overgrowth of AlxGa1-xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 265-267

  Iida, Kazuyoshi ^a   Kawashima, Takeshi ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^c   Bandoh, Akira ^b  

^a MEIJO UNIVERSITY   (Japan)

^b High Performance Materials Department   (Japan)

^c NONE

Author keywords

A3. Heteroepitaxial lateral overgrowth AlGaN; A3. Metal organic vapor phase epitaxy; B1. AlGaN; B1. AlN; B3. UV light emitting diode

Indexed keywords

ALUMINUM NITRIDE; DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; ULTRAVIOLET DEVICES;

HETEROEPITAXIAL LATERAL OVERGROWTH; LOW DISLOCATION DENSITY; SAPPHIRE SUBSTRATES;

EPITAXIAL GROWTH;

EID: 33846424604     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.026     Document Type: Article

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