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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1425-1428

P-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE

(5) Hikosaka, T a Koide, N a Honda, Y a Yamaguchi, M a Sawaki, N a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE CONCENTRATION; INTENTIONAL CARBON DOPING; ORGANIC VAPOR PHASE EPITAXY; P-TYPE CONDUCTION; 73.61.EY; 81.15.GH; CARBON DOPING; CARBON SOURCE; DOPING LEVELS; METAL-ORGANIC VAPOUR PHASE EPITAXY; SI SUBSTRATES;

CARBON; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES; ORGANOMETALLICS; SILICON;

SEMICONDUCTING GALLIUM COMPOUNDS; GALLIUM NITRIDE;

EID: 33746328364 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565305 Document Type: Conference Paper

Times cited : (21)

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