Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE

Institute of Physics Conference Series

Volumn 184, Issue , 2005, Pages 251-254

  Hikosaka, T ^a   Honda, Y ^a   Koide, N ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DOPING (ADDITIVES); ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SILICON;

DEFECT-RELATED EMISSION; EMISSION ENERGY; P-TYPE CONDUCTION;

SEMICONDUCTOR MATERIALS;

EID: 33644524058     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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