Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 28-33

  Li, L ^a   Han, B K ^a   Law, D ^a   Begarney, M ^a   Hicks, R F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Gallium arsenide; Indium arsenide; Metalorganic vapor phase epitaxy; Scanning tunneling microscopy

Indexed keywords

HEATING; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0032476975     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00644-7     Document Type: Article

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