Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 536-540

  Kollonitsch, Z ^a   Schimper, H J ^a   Seidel, U ^a   Moller K ^a   Neumann, S ^b   Tegude, F J ^b   Willig, F ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

A1. Low energy electron diffraction; A1. Reflectance difference spectroscopy; A1. Surface reconstruction; A3. Metal organic chemical vapor deposition; B1. Antimonides; B2. Semiconducting ternary compounds

Indexed keywords

ANTIMONY; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TERNARY SYSTEMS; TUNNEL DIODES; ULTRAHIGH VACUUM; X RAY DIFFRACTION;

LOW-ENERGY ELECTRON DIFFRACTION; REFLECTANCE DIFFERENCE SPECTROSCOPY; SEMICONDUCTING TERNARY COMPOUNDS; SURFACE RECONSTRUCTION;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 30344436992     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.027     Document Type: Conference Paper

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